Radiation damage in the silicon dioxide (SiO2) layer

Abstract

ABSTRACT

The most sensitive part of a metal–oxide–semiconductor (MOS) structure to ionizing radiation is the oxide insulating layer. When ionizing radiation passes through the oxide, the energy deposited creates electron/hole pairs. Oxide trapped charge causes a negative shift in capacitance-voltage (C-V) characteristics. These changes are the results of, firstly, incre asing trapped positive charge in the oxide, which causes a parallel shift of the curve to more negative voltages, and secondly, increasing interface trap density, which causes the curve to stretch-out.

ABSTRAK

The most sensitive part of a metal–oxide–semiconductor (MOS) structure to ionizing radiation is the oxide insulating layer. When ionizing radiation passes through the oxide, the energy deposited creates electron/hole pairs. Oxide trapped charge causes a negative shift in capacitance-voltage (C-V) characteristics. These changes are the results of, firstly, increasing trapped positive charge in the oxide, which causes a parallel shift of the curve to more negative voltages, and secondly, increasing interface trap density, which causes the curve to stretch-out.